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r07ds0361ej0201 rev.2.01 page 1 of 9 may 13, 2013 preliminary data sheet np40n10ydf, np40n10vdf, NP40N10PDF 100 v ? 40 a ? n-channel power mos fet application: automotive description these products are n-channel mos field effect transistors designed for high current switching applications. features ? low on-state resistance ? r ds(on) = 25 m max. (v gs = 10 v, i d = 20 a) (np40n10ydf) ? r ds(on) = 26 m max. (v gs = 10 v, i d = 20 a) (np40n10vdf) ? r ds(on) = 27 m max. (v gs = 10 v, i d = 20 a) (NP40N10PDF) ? low c iss : c iss = 2100 pf typ. (v ds = 25 v, v gs = 0 v) ? logic level drive type ? designed for automotive application and aec-q101 qualified outline 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain source body diode gate drain 8-pin hson 1. gate 2. drain 3. source 4. fin (drain) 1. gate 2. drain 3. source 4. fin (drain) to-252 to-263 1 2 2 3 3 4 5 6 6 7 7 8 1 1 2 3 3 4 1 1 2 3 3 4 remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred. ordering information part no. lead plating packing package np40n10ydf-e1-ay * 1 pure sn (tin) tape 2500 p/reel taping (e1 type) 8-pin hson np40n10ydf-e2-ay * 1 taping (e2 type) np40n10vdf-e1-ay * 1 pure sn (tin) tape 2500 p/reel taping (e1 type) to-252 (mp-3zp) np40n10vdf-e2-ay * 1 taping (e2 type) NP40N10PDF-e1-ay * 1 pure sn (tin) tape 800 p/reel taping (e1 type) to-263 (mp-25zp) NP40N10PDF-e2-ay * 1 taping (e2 type) note: * 1. pb-free (this product does not cont ain pb in the external electrode) r07ds0361ej0201 rev.2.01 may 13, 2013
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 2 of 9 may 13, 2013 absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 100 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 40 a drain current (pulse) ? 1 i d(pulse) 80 a total power dissipation (t c = 25 c) p t1 120 w np40n10ydf total power dissipation (t a = 25 c) ? 2 p t2 1.0 w np40n10vdf total power dissipation (t a = 25 c) ? 2 1.2 NP40N10PDF total power dissipation (t a = 25 c) 1.8 channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current ? 3 i as 25 a single avalanche energy ? 3 e as 61 mj thermal resistance channel to case thermal resistance r th(ch-c) 1.25 c/w channel to ambient thermal resistance ? 2 r th(ch-a) np40n10ydf 150 c/w np40n10vdf 125 c/w NP40N10PDF 83.3 c/w notes: *1. t c = 25c, pw 10 s, duty cycle 1% * 2. mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) *3. t ch(start) = 25c, v dd = 50 v, r g = 25 , l = 100 h, v gs = 20 v 0 v
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 3 of 9 may 13, 2013 electrical characteristics (t a = 25c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 1 a v ds = 100 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 1.5 2.0 2.5 v v ds = v gs , i d = 250 a forward transfer admittance ? 1 | y fs | 20 40 s v ds = 5.0 v, i d = 20 a drain to source on-state resistance ? 1 np40n10ydf r ds(on)1 21 25 m v gs = 10 v, i d = 20 a r ds(on)2 23 30 m v gs = 5.0 v, i d = 20 a r ds(on)3 24 36 m v gs = 4.5 v, i d = 20 a np40n10vdf r ds(on)1 21 26 m v gs = 10 v, i d = 20 a r ds(on)2 23 31 m v gs = 5.0 v, i d = 20 a r ds(on)3 24 37 m v gs = 4.5 v, i d = 20 a NP40N10PDF r ds(on)1 21 27 m v gs = 10 v, i d = 20 a r ds(on)2 23 32 m v gs = 5.0 v, i d = 20 a r ds(on)3 24 38 m v gs = 4.5 v, i d = 20 a input capacitance c iss 2100 3150 pf v ds = 25 v, output capacitance c oss 200 300 pf v gs = 0 v, reverse transfer capacitance c rss 80 144 pf f = 1 mhz turn-on delay time t d(on) 15 33 ns v dd = 50 v, i d = 20 a, rise time t r 16 40 ns v gs = 10 v, turn-off delay time t d(off) 60 120 ns r g = 0 fall time t f 5 13 ns total gate charge q g 47 71 nc v dd = 80 v, v gs = 10 v, i d = 40 a gate to source charge q gs 8 nc gate to drain charge q gd 12 nc body diode forward voltage ? 1 v f(s-d) 0.9 1.5 v i f = 40 a, v gs = 0 v reverse recovery time t rr 67 ns i f = 40 a, v gs = 0 v, di/dt = 100 a/ s reverse recovery charge q rr 162 nc note: * 1. pulsed test test circuit 3 gate charge v gs = 20 . ... test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ... ?
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 4 of 9 may 13, 2013 typical characteristics (t a = 25c) derating factor of forward bias safe operating area 0 20 40 60 80 100 120 20 40 60 80 100 140 120 0 dt - percentage of rated power - % 0 25 50 75 100 125 150 175 t c - case temperature - c total power dissipation vs. case temperature 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w forward bias safe operating area 0.1 1 10 100 v ds - drain to source voltage - v i d - drain current - a 0.1 1 10 100 1000 t c = 25c single pulse r ds(on) limited (v gs = 10v) pw = 100 s 1 ms 10 ms power dissipation limited secondary breakdown limited i d(pulse)
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 5 of 9 may 13, 2013 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w r th(ch-c) = 1.25c/w r th(ch-a) = 83.3c/w single pulse 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w r th(ch-c) = 1.25c/w r th(ch-a) = 150c/w 100 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s 0.01 0.1 1 10 100 1000 r th(t) - transient thermal resistance - c/w r th(ch-c) = 1.25c/w r th(ch-a) = 125c/w transient thermal resistance vs. pulse width (np40n10ydf) transient thermal resistance vs. pulse width (np40n10vdf) transient thermal resistance vs. pulse width (NP40N10PDF) single pulse mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m) single pulse mounted on glass epoxy substrate of 40 mm 40 mm 1.6 mmt with 4% copper area (35 m)
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 6 of 9 may 13, 2013 t a = ? 55c ? 25c 25c 75c 100c 125c 150c 175c t a = ?55c ?25c 25c 75c 100c 125c 150c 175c i d = 40 a 20 a 8 a 10 v 5.0 v v gs = 4.5 v v gs = 10 v 5.0 v 4.5 v forward transfer characteristics 0.001 0.01 0.1 1 10 100 0123 5 4 v gs - gate to source voltage - v i d - drain current - a gate to source threshold voltage vs. channel temperature 0 0.5 1.5 2.5 1 2 ?100 ?50 0 50 100 150 200 t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v forward transfer admittance vs. drain current 1 10 100 0.01 0.1 1 10 100 i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. drain current 0 10 40 60 50 30 20 5 35 45 25 15 30 40 20 10 0 0.1 1 10 100 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 0 5 10 15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 40 30 20 10 60 100 90 80 50 70 046 23 15 v ds - drain to source voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - m v ds = v gs i d = 250 a pulsed pulsed pulsed v ds = 10 v pulsed v ds = 5 v pulsed
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 7 of 9 may 13, 2013 v gs = 10 v 0 v t d(off) t r t d(on) t f 5.0 v v gs = 4.5 v 10 v c iss c oss c rss v ds v dd = 80 v 50 v 20 v v gs capacitance vs. drain to source voltage 10 100 1000 10000 0.01 0.1 1 10 100 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance -pf reverse recovery time vs. drain current 1 10 100 0.1 1 10 100 i f - drain current - a t rr - reverse recovery time - ns switching characteristics 1 10 100 1000 0.1 1 10 100 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns dynamic input/output characteristics 4 2 6 8 12 10 q g - gate charge - nc v ds - drain to source voltage - v 0 v gs - gate to source voltage - v source to drain diode forward voltage 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 v f(s-d) - source to drain voltage - v i f - diode forward current - a drain to source on-state resistance vs. channel temperature ?100 ?50 0 50 100 150 200 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m 03 0 20 10 50 40 v dd = 50 v v gs = 10 v r g = 0 pulsed di/dt = 100 a/s v gs = 0 v i d = 20 a pulsed v gs = 0 v f = 1 mhz i d = 40 a 70 60 50 40 30 20 10 0 90 70 80 60 50 40 30 20 10 0
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 8 of 9 may 13, 2013 package drawings (unit: mm) 8-pin hson (mass: 0.13 g typ.) renesas package code: plsn0008ka-a 1 2 3 4 7 8 6 5 1.27 5.0 0.2 5.15 0.2 6.0 0.2 3.18 0.2 0.8 0.15 0.6 0.15 0.42 ? 0.05 +0.1 0.10 m 0.10 s 0 ? 0 +0.05 0.42 0.05 1.45 max. 3.8 0.2 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain 5.4 0.2 0.73 0.4 to-252 (mp-3zp) (mass: 0.27 g typ.) renesas package code: prss0004zp-a 6.5 0.2 2.3 0.1 0.50.1 0.76 0.12 0 to 0.25 0.50.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.10.2 0.51 min. 4.0 min. 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) 1.13
np40n10ydf, np40n10vdf, NP40N10PDF preliminary r07ds0361ej0201 rev.2.01 page 9 of 9 may 13, 2013 to-263 (mp-25zp) (mass: 1.48 g typ.) renesas package code: prss0004al-a no plating 7.88 min. 2.54 0.75 0.2 0.5 9.15 0.3 8.0 typ. 2.54 0.25 15.25 0.5 1.35 0.3 2 13 4 2.5 4.45 0.2 1.3 0.2 0.6 0.2 0 to 8 1. gate 2. drain 3. source 4. fin (drain) 0.025 to 0.25 0.25 10.0 0.3
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np40n10ydf, np 40n10vdf, NP40N10PDF data sheet rev. date description page summary 1.00 feb 21, 2013 ? first edition issued 2.00 mar 11, 2013 1 7 "outline" added modification of "capacitance vs. drain to source voltage" 2.01 may 13, 2013 1 8 modification of "outline" modification of "package drawings 8-pinhson"
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